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High-field cantilever magnetometry as a tool for the determination of the magnet

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Abstract Cantilever torque magnetometry is utilized widely in physics and material science for the determination of magnetic properties of thin films and semiconductors Here, we report on its first application in rock magnetism, namely the determination of K1 and K2 of single crystal octahedra of natural magnetite The design of cantilever magnetometers allows optimization for the specific research question at hand For the present study, a cantilever magnetometer was used that enables measu

Negative thermal expansion of MgB2 in the superconducting state and anomalous be

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The thermal expansion coefficient ! of MgB2 is revealed to change from positive to negative on cooling through the superconducting transition temperature Tc The Grüneisen function also becomes negative at Tc followed by a dramatic increase to large positive values at low temperature The results suggest anomalous coupling between superconducting electrons and low-energy phonons

Room Temperature Capacitance Imaging of Single Sub-Surface InAs Quantum Dots

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Scanning capacitance microscopy (SCM) is known to be a valuable tool for carrier mapping and profiling on nanoscale semiconductor samples Certain applications, however, such as quantitative capacitance microscopy on InAs quantum dots, e g require low modulation frequencies and complete darkness, which are requirements completely incompatible with the current commercial SCM systems relying on a laser feedback system For this reason, an intercepted feedback method was developed, which allo

Tip geometry effects in scanning capacitance microscopy on GaAs Schottky and met

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In this work, the influence of the tip geometry in scanning capacitance microscopy is investigated experimentally and theoretically on metal-oxide-semiconductor- !MOS " and Schottky-type junctions on gallium-arsenide !GaAs " Using a two-dimensional model we find that on Schottky-type junctions theelectric field around the tip is screened by the surface states and that the essential parameters entering the capacitance versus voltage C!V " characteristics are the doping level and the contact

Determination of the Relative Permittivity, E′, of Methylbenzene at Temperatur

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The relative electric permittivity of liquid methylbenzene has been determined with an uncertainty of 0 01% from measurements of the resonance frequency of the lowest order inductive-capacitance mode of a re-entrant cavity (J Chem Thermodyn 2005, 37, 684–691) at temperatures between (290 and 406) K and pressures below 20 MPa and at T ) 297 K with a MicroElectricalMechanical System (MEMS) interdigitated comb capacitor For the re-entrant cavity, the working equations were a combination of the